1 2 3 4 5 6 sot-363 device marking shipping ordering information m mbt3906dw1t1 a2 3000 units/reel the m mbt3906dw1t1 device is a spinoff of our popular sot23/sot323 threeleaded device. it is designed for general purpose amplifier applications and is housed in the sot363 sixleaded surface mount package. by putting two discrete devices in one package, this device is ideal for lowpower surface mount applications where board space is at a premium. ? h fe , 100300 ? low v ce(sat) , 0.4 v ? simplifies circuit design ? reduces board space ? reduces component count ? available in 8 mm, 7inch/3,000 unit tape and reel ? device marking:m mbt 3906dw1t1 = a2 symbol value unit collectorCemitter voltage v ceo C40 vdc collectorCbase voltage v cbo C40 vdc emitterCbase voltage v ebo C5.0 vdc collector current C continuous i c C200 madc electrostatic discharge esd hbm>16000, mm>2000 v thermal characteristics characteristic symbol max unit total package dissipation (1) t a = 25 c p d 150 mw thermal resistance junction to ambient r ja 833 c/w junction and storage temperature range t j , t stg C55 to +150 c 1. device mounted on fr4 glass epoxy printed circuit board using the minimum 1. recommended footprint. rating maximum ratings dual bias resistor transistor q 1 q 2 (1) (2) (3) (4) (5) (6) featrues z weight :0.005g ? 2012- 0 willas electronic corp. MMBT3906DW1T1
electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collectorCemitter breakdown voltage (2) v (br)ceo C40 C vdc collectorCbase breakdown voltage v (br)cbo C40 C vdc emitterCbase breakdown voltage v (br)ebo C5.0 C vdc base cutoff current i bl C C50 nadc collector cutoff current i cex C C50 nadc on characteristics (2) dc current gain (i c = C0.1 madc, v ce = C1.0 vdc) (i c = C1.0 madc, v ce = C1.0 vdc) (i c = C10 madc, v ce = C1.0 vdc) (i c = C50 madc, v ce = C1.0 vdc) (i c = C100 madc, v ce = C1.0 vdc) h fe 60 80 100 60 30 C C 300 C C C collectorCemitter saturation voltage (i c = C10 madc, i b = C1.0 madc) (i c = C50 madc, i b = C5.0 madc) v ce(sat) C C C0.25 C0.4 vdc baseCemitter saturation voltage (i c = C10 madc, i b = C1.0 madc) (i c = C50 madc, i b = C5.0 madc) v be(sat) C0.65 C C0.85 C0.95 vdc smallCsignal characteristics currentCgain C bandwidth product f t 250 C mhz output capacitance c obo C 4.5 pf input capacitance c ibo C 10.0 pf 2. pulse test: pulse width 300 m s; duty cycle 2.0%. electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min max unit input impedance (v ce = C10 vdc, i c = C1.0 madc, f = 1.0 khz) h ie 2.0 12 k w voltage feedback ratio (v ce = C10 vdc, i c = C1.0 madc, f = 1.0 khz) h re 0.1 10 x 10 C4 smallCsignal current gain (v ce = C10 vdc, i c = C1.0 madc, f = 1.0 khz) h fe 100 400 C output admittance (v ce = C10 vdc, i c = C1.0 madc, f = 1.0 khz) h oe 3.0 60 mhos noise figure (v ce = C5.0 vdc, i c = C100 adc, r s = 1.0 k w , f = 1.0 khz) nf C 4.0 db switching characteristics delay time (v cc = C3.0 vdc, v be = 0.5 vdc) t d C 35 ns rise time (i c = C10 madc, i b1 = C1.0 madc) t r C 35 ns storage time (v cc = C3.0 vdc, i c = C10 madc) t s C 225 ns fall time (i b1 = i b2 = C1.0 madc) t f C 75 ns 2012- 0 willas electronic corp. dual bias resistor transistor MMBT3906DW1T1
figure 1. delay and rise time equivalent test circuit figure 2. storage and fall time equivalent test circuit 3 v 275 10 k 1n916 c s < 4 pf* 3 v 275 10 k c s < 4 pf* < 1 ns +0.5 v 10.6 v 300 ns duty cycle = 2% < 1 ns +9.1 v 10.9 v duty cycle = 2% t 1 0 10 < t 1 < 500 s * total shunt capacitance of test jig and connectors typical transient characteristics figure 3. capacitance reverse bias (volts) 2.0 3.0 5.0 7.0 10 1.0 0.1 figure 4. charge data i c , collector current (ma) 5000 1.0 v cc = 40 v i c /i b = 10 q, charge (pc) 3000 2000 1000 500 300 200 700 100 50 70 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 capacitance (pf) 1.0 2.0 3.0 5.0 7.0 10 20 30 40 0.2 0.3 0.5 0.7 q t q a c ibo c obo t j = 25 c t j = 125 c figure 5. turnCon time i c , collector current (ma) 70 100 200 300 500 50 time (ns) 1.0 2.0 3.0 10 20 70 5 100 figure 6. fall time i c , collector current (ma) 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 t , fall time (ns) f v cc = 40 v i b1 = i b2 i c /i b = 20 i c /i b = 10 i c /i b = 10 t r @ v cc = 3.0 v t d @ v ob = 0 v 40 v 15 v 2.0 v 2012- 0 willas electronic corp. dual bias resistor transistor MMBT3906DW1T1
typical audio smallCsignal characteristics noise figure variations (v ce = C5.0 vdc, t a = 25 c, bandwidth = 1.0 hz) figure 7. f, frequency (khz) 2.0 3.0 4.0 5.0 1.0 0.1 figure 8. r g , source resistance (k ohms) 0 nf, noise figure (db) 1.0 2.0 4.0 10 20 40 0.2 0.4 0 100 4 6 8 10 12 2 0.1 1.0 2.0 4.0 10 20 40 0.2 0.4 100 nf, noise figure (db) f = 1.0 khz i c = 1.0 ma i c = 0.5 ma i c = 50 a i c = 100 a source resistance = 200 i c = 1.0 ma source resistance = 200 i c = 0.5 ma source resistance = 2.0 k i c = 100 a source resistance = 2.0 k i c = 50 a h parameters (v ce = C10 vdc, f = 1.0 khz, t a = 25 c) figure 9. current gain i c , collector current (ma) 70 100 200 300 50 figure 10. output admittance i c , collector current (ma) h , dc current gain h , output admittance ( mhos) figure 11. input impedance i c , collector current (ma) figure 12. voltage feedback ratio i c , collector current (ma) 30 100 50 10 20 2.0 3.0 5.0 7.0 10 1.0 0.1 0.2 1.0 2.0 5.0 0.5 10 0.3 0.5 3.0 0.7 2.0 5.0 10 20 1.0 0.2 0.5 oe h , input impedance (k ohms) ie 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 7 5 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 fe 70 30 0.7 7.0 0.7 7.0 7.0 3.0 0.7 0.3 0.7 7.0 0.7 7.0 h , voltage feedback ratio (x 10 ) re -4 2012- 0 willas electronic corp. dual bias resistor transistor MMBT3906DW1T1
typical static characteristics figure 13. dc current gain i c , collector current (ma) 0.3 0.5 0.7 1.0 2.0 0.2 0.1 h , dc current gain (normalized) 0.5 2.0 3.0 10 50 70 0.2 0.3 0.1 100 1.00.7 200 3020 5.0 7.0 fe v ce = 1.0 v t j = +125 c +25 c -55 c figure 14. collector saturation region i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0.1 v , collector emitter voltage (volts) 0.5 2.0 3.0 10 0.2 0.3 0 1.00.7 5.0 7.0 ce i c = 1.0 ma t j = 25 c 0.070.05 0.030.02 0.01 10 ma 30 ma 100 ma figure 15. on voltages i c , collector current (ma) 0.4 0.6 0.8 1.0 0.2 figure 16. temperature coefficients i c , collector current (ma) v, voltage (volts) 1.0 2.0 5.0 10 20 50 0 100 -0.5 0 0.5 1.0 0 60 80 120 140 160 180 20 40 100 200 -1.0 -1.5 -2.0 200 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = 1.0 v +25 c to +125 c -55 c to +25 c +25 c to +125 c -55 c to +25 c vc for v ce(sat) vb for v be(sat) , temperature coefficients (mv/ c) v 2012- 0 willas electronic corp. dual bias resistor transistor MMBT3906DW1T1
0.5 mm (min) 0.4 mm (min) 0.65 mm 0.65 mm 1.9 mm sot - 363 2012- 0 willas electronic corp. dual bias resistor transistor MMBT3906DW1T1 dimensions in inches and (millimeters) .056(1.40) .047(1.20) .071(1.80) .004(0.10)min. .010(0.25) .003(0.08) .043(1.10) .032(0.80) .016(0.40) .004(0.10) .004(0.10)max. .087(2.20) .071(1.80) .054(1.35) .045(1.15) .021(0.55) .030(0.75) .096(2.45)
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